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2SJ496

Hitachi Semiconductor
Part Number 2SJ496
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS(...
Datasheet PDF File 2SJ496 PDF File

2SJ496
2SJ496

Overview
2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st.
Edition Features • Low on-resistance R DS(on) = 0.
12Ω typ.
(at VGS = –10 V, I D = –2.
5 A) • 4V gate drive devices.
• Large current capacitance ID = –5 A Outline TO-92 Mod D G 32 1 1.
Source 2.
Drain 3.
Gate S 2SJ496 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Ta = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3...


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