DatasheetsPDF.com

2SK211

Toshiba Semiconductor
Part Number 2SK211
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211 2SK211 FM Tuner Applications VHF Band Amplifier...
Datasheet PDF File 2SK211 PDF File

2SK211
2SK211

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211 2SK211 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.
5dB (typ.
) (f = 100 MHz) • High forward transfer admitance: |Yfs| = 9 mS (typ.
) • Extremely low reverse transfer capacitance: Crss = 0.
1 pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating −18 10 150 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking JEDEC ― JEITA SC-59 TOSHIBA 2-3F1C Weight: 0.
012 g (typ.
) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol Test Condition IGSS VGS = −0.
5 V, VDS = 0 V V (BR) GDO IG = −100 μA IDSS (Note) VGS = 0 V, VDS = 10 V VGS (OFF) VDS = 10 V, ID = 1 μA ⎪Yfs⎪ VGS = 0 V, VDS = 10 V, f = 1 kHz Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz Crss VGD = −10 V, f = 1 MHz GPS VDD = 10 V, f = 100 MHz (Figure) NF VDD = 10 V, f = 100 MHz (Figure) Note: IDSS classification O: 1.
0~3.
0 mA, Y: 2.
5~6.
0 mA, GR (G): 5.
0~10.
0 mA 1 Min Typ.
Max Unit ⎯ ⎯ −10 nA −18 ⎯ ⎯ V 1.
0 ⎯ 10 mA −0.
4 ⎯ −4.
0 V ⎯ 9 ⎯ mS ⎯ 6.
0 ⎯ pF ⎯ ⎯ 0.
15 pF ⎯ 18 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)