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2SK217

Part Number	2SK217
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel Junction FET
Published	Mar 30, 2005
Detailed Description	2SK217 Silicon N-Channel Junction FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK21...
Datasheet	2SK217 PDF File

Overview

2SK217 Silicon N-Channel Junction FET Application VHF amplifier Outline MPAK 3 1 2 1.
Gate 2.
Drain 3.
Source 2SK217 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain current Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO ID IG Pch Tch Tstg Ratings –30 20 10 150 150 –55 to +150 Unit V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Reverse transfer capacitance Note: Grade Mark I DSS C ZC 2.
5 to 5 D ZD 4 to 8 Symbol V(BR)GDO I GSS VGS(off) I DSS* |yfs| Crss 1 Min –30 — — 2.
5 — — E ZE 6 to 1...

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