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2SK2838

Part Number 2SK2838
Manufacturer Toshiba Semiconductor
Title N-Channel MOSFET
Description 2SK2838 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2838 Chopper Regulator, DC−DC Converter and Motor Drive Applicatio...
Features he significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the To...

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2SK2835 : 2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 200 V) l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel tempera.

2SK2836 : 2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2836 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 6.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.85 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Chan.

2SK2837 : 2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2837 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 20 80 150 960 20 15 150 −55 to 150 www.DataSheet.co.kr Unit V V V A A W 1. .

2SK2839 : 2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2839 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gatedrive l Low drain−source ON resistance : RDS (ON) = 30 mΩ (typ.) l High forward transfer admittance : |Yfs| = 11 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 30 V) l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (N.




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