DatasheetsPDF.com

2SK2847


Part Number 2SK2847
Manufacturer Toshiba Semiconductor
Title N-Channel MOSFET
Description 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−s...
Features tion of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the...

File Size 434.02KB
Datasheet 2SK2847 PDF File








Similar Ai Datasheet

2SK2841 : 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 400 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Rep.

2SK2842 : 2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2842 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Rep.

2SK2842 : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 48 PD Total Dissipation 45 Tj Operating Junction Temperature 150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel.

2SK2843 : 2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2843 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.54 Ω (typ.) : |Yfs| = 9.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 600 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 40 45 363 10 5.0 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C Pulse (N.

2SK2844 : 2SK2844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2844 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) z High forward transfer admittance : |Yfs| = 26 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche cu.

2SK2845 : 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII) 2SK2845 Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive a.

2SK2846 : 2SK2846 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2846 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 1.7 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) Drain power dissipation Single pulse avalanche energ.

2SK2848 : 2SK2848 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 600 V VGSS ±30 V ID ±2 A * ID (pulse) 1 ±8 A PD 30 (Tc = 25ºC) W EAS *2 10 mJ IAS 2 A Tch 150 ºC Tstg –55 to +150 ºC * 1: PW 100µs, duty cycle 1% * 2: VDD = 30V, L = 5mH, IL = 2.0A, unclamped, RG = 50Ω, See Figure 1 on Page 5. Electrical Characteristics Symbol Ratings min typ V(BR) DSS 600 I GSS I DSS VTH 2.0 3.0 Re (yfs) 1.2 1.7 RDS (on) 3.0 Ciss 290 Coss 70 Crss 30 t d (on) 16 tr 30 t d (off) 45 tf 145 VSD 0.9 max ±100 100 4.0 3.8 1.4 (Ta = 25ºC) Unit Conditions V ID = 100µA, VGS = 0V nA VGS = ±30V µA VDS = 600V,.

2SK2848 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 30 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.17 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specifie.

2SK2849-01L : .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)