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2SK2847

Toshiba Semiconductor
Part Number 2SK2847
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2847 DC−DC Converter and Motor Drive A...
Datasheet PDF File 2SK2847 PDF File

2SK2847
2SK2847

Overview
2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.
1 Ω (typ.
) z High forward transfer admittance : |Yfs| = 7.
0 S (typ.
) z Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche en...


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