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2SK2851

Hitachi Semiconductor
Part Number 2SK2851
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st. Edition Features • Low on-resistance R DS...
Datasheet PDF File 2SK2851 PDF File

2SK2851
2SK2851

Overview
2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st.
Edition Features • Low on-resistance R DS(on) = 0.
055Ω typ.
(at VGS = 10 V, I D = 2.
5 A) • 4V gate drive devices.
• Large current capacitance ID = 5 A Outline TO-92MOD.
D G 3 S 2 1 1.
Source 2.
Drain 3.
Gate 2SK2851 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Ta = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP *...


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