DatasheetsPDF.com

2SK2855

Part Number	2SK2855
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION (Note)The TOS...
Datasheet	2SK2855 PDF File

Overview

2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.
These TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
Unit in mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID PD (Note 1) Tch Tstg 10 ...

Similar Datasheet

2SK2800 Silicon N Channel MOS FET - Hitachi Semiconductor
2SK2802 Silicon N Channel MOS FET - Hitachi Semiconductor
2SK2803 MOSFET - Sanken electric
2SK2803 N-Channel MOSFET - INCHANGE
2SK2804 MOSFET - Sanken electric
2SK2805 MOSFET - Sanken electric
2SK2806 N-channel MOS-FET - Fuji Electric
2SK2806-01 N-channel MOS-FET - Fuji Electric
2SK2807-01L N-channel MOS-FET - Fuji Electric
2SK2807-01S N-channel MOS-FET - Fuji Electric

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)