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2SK2859

Sanyo Semicon Device
Part Number 2SK2859
Manufacturer Sanyo Semicon Device
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features · Low On resis...
Datasheet PDF File 2SK2859 PDF File

2SK2859
2SK2859

Overview
Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features · Low On resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions unit:mm 2149 [2SA2859] 8 5 0.
3 5.
0 0.
595 1.
27 0.
43 0.
1 1.
5 1.
8max 1 4 0.
2 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 4.
4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Mounted on a ceramic board (10002×0.
8mm) PW≤10µs, duty cycle≤1% Conditions Ratings 100 ±15 2 8 1.
6 150 –55 to +150 Unit V V A A W ˚C ˚C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1498TS (KOTO) TA-0859 No.
5851-1/4 6.
0 2SK2859 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Cutoff Current Gate-to-Souce Leakage Current Gate-to-Souce Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capaci...


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