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2SK2862

Toshiba Semiconductor
Part Number 2SK2862
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2862 DC−DC Converter, Relay Drive and Mo...
Datasheet PDF File 2SK2862 PDF File

2SK2862
2SK2862

Overview
2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2862 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 2.
9 Ω (typ.
) z High forward transfer admittance : |Yfs| = 1.
7 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg 500 500 ±30 3 5 12 25 112 2 2.
5 150 −55 to 150 V V V A A A W mJ A mJ °C °C JEDEC — JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.
9 ...


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