DatasheetsPDF.com

2SK291

Part Number	2SK291
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel Junction FET
Published	Mar 30, 2005
Detailed Description	2SK291 Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1. Drain 2. Sou...
Datasheet	2SK291 PDF File

Overview

2SK291 Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1.
Drain 2.
Source 3.
Gate 3 2 1 2SK291 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings –15 –15 50 5 300 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Symbol V(BR)GDO V(BR)GSO I GSS I DSS* 1 Min –15 –15 ...

Similar Datasheet

2SK2000-R Power MOSFET - Fuji Electric
2SK2002-01M N-Channel MOSFET Transistor - Inchange Semiconductor
2SK2002-01MR N-channel MOS-FET - Fuji Electric
2SK2003-01M N-Channel MOSFET Transistor - Inchange Semiconductor
2SK2003-01MR N-channel MOS-FET - Fuji Electric
2SK2004-01L N-channel MOS-FET - Fuji Electric
2SK2004-01S N-channel MOS-FET - Fuji Electric
2SK2007 Silicon N-Channel MOS FET - Hitachi Semiconductor
2SK2008 Silicon N-Channel MOS FET - Hitachi Semiconductor
2SK2009 N-Channel MOSFET - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)