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2SK3124

Panasonic Semiconductor
Part Number 2SK3124
Manufacturer Panasonic Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-spe...
Datasheet PDF File 2SK3124 PDF File

2SK3124
2SK3124

Overview
Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q No secondary breakdown q High electrostatic breakdown voltage 6.
5±0.
1 5.
3±0.
1 4.
35±0.
1 unit: mm 2.
3±0.
1 0.
5±0.
1 s Applications q High-speed switching (switching power supply) q For high-frequency power amplification 7.
3±0.
1 1.
8±0.
1 2.
5±0.
1 0.
8max 0.
93±0.
1 1.
0±0.
1 0.
1±0.
05 0.
5±0.
1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 400 ±20 ±0.
5 ±1 0.
25 10 1 150 −55 to +150 Unit V V A A mJ W °C °C 0.
75±0.
1 2.
3±0.
1 4.
6±0.
1 1 2...


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