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2SK3126

Toshiba Semiconductor
Part Number 2SK3126
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3126 Switching Regulator Applications U...
Datasheet PDF File 2SK3126 PDF File

2SK3126
2SK3126

Overview
2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.
48 Ω (typ.
) z High forward transfer admittance : |Yfs| = 7.
5 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.
4~3.
4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Cha...


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