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2SK3135

Hitachi Semiconductor
Part Number 2SK3135
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 ...
Datasheet PDF File 2SK3135 PDF File

2SK3135
2SK3135

Overview
2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd.
Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 3 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 3 2SK3135(L),2SK3135(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 75 300 75 50 214 100 150 –55 to +150 Unit V V A A A A mJ W °C °C 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK3135(L),2SK3135(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 — — 1.
0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) ...


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