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2SK3212

Hitachi Semiconductor
Part Number 2SK3212
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st. Edition February 1999 Features • Low ...
Datasheet PDF File 2SK3212 PDF File

2SK3212
2SK3212

Overview
2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st.
Edition February 1999 Features • Low on-resistance R DS = 0.
1 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 2SK3212 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 10 40 10 10 10 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ±20 — — 1.
0 — — 4.
5 — — — — — — — — — Typ — — — — — 100 130 7.
5 420 185 100 12 60 105 70 0.
9 90 Max — — ±10 10 2.
5 130 180 — —...


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