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2SK3214

Hitachi Semiconductor
Part Number 2SK3214
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December ...
Datasheet PDF File 2SK3214 PDF File

2SK3214
2SK3214

Overview
2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st.
Edition December 1998 Features • Low on-resistance R DS =130mΩ typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain(Flange) 3.
Source 2SK3214 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 10 40 10 10 6.
6 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 ±20 — — 1.
0 — — 8 — — — — — — — — — Typ — — — — — 130 150 13 1100 280 130 15 75 280 110 0.
85 100 Max...


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