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2SK3288

Hitachi Semiconductor
Part Number 2SK3288
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3288 Silicon N Channel MOS FET High Speed Switching ADE-208-803 (Z) 1st.Edition. June 1999 Features • Low on-resista...
Datasheet PDF File 2SK3288 PDF File

2SK3288
2SK3288

Overview
2SK3288 Silicon N Channel MOS FET High Speed Switching ADE-208-803 (Z) 1st.
Edition.
June 1999 Features • Low on-resistance R DS = 2.
7 Ω typ.
(VGS = 10 V , ID = 50 mA) R DS = 4.
7 Ω typ.
(VGS = 4 V , ID = 20 mA) • 4 V gate drive device.
• Small package (MPAK) Outline MPAK 3 1 D 2 G 1.
Source 2.
Gate 3.
Drain S 2SK3288 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 100 400 100 400 150 –55 to +150 Unit V V mA mA mA mW °C °C 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value on the alumina ceramic board (12.
5 x 20 x 0.
7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20...


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