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2SK3290

Hitachi Semiconductor
Part Number 2SK3290
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resis...
Datasheet PDF File 2SK3290 PDF File

2SK3290
2SK3290


Overview
2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.
Edition.
June 1999 Features • Low on-resistance R DS = 0.
455 Ω typ.
(VGS = 10 V , ID = 250 mA) R DS = 0.
9 Ω typ.
(VGS = 4 V , ID = 100 mA) • 4 V gate drive device.
• Small package (MPAK) Outline MPAK 3 1 D 2 G 1.
Source 2.
Gate 3.
Drain S 2SK3290 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 500 2 500 400 150 –55 to +150 Unit V V mA A mA mW °C °C 1.
PW ...



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