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2SK522

Hitachi Semiconductor
Part Number 2SK522
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1 23 1. Gate ...
Datasheet PDF File 2SK522 PDF File

2SK522
2SK522

Overview
2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1 23 1.
Gate 2.
Source 3.
Drain 2SK522 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO IG ID Pch Tch Tstg Ratings –30 10 20 200 150 –55 to +150 Unit V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: Drain I DSS D 4 to 8 E 6 to 10 Symbol V(BR)GDO I GSS I DSS* 1 Min –30 — 4 — 8 — — 20 — F 10 to 20 Typ — — — — 10 6.
8 0.
1 27 1.
7 Max — –10 20 –3 — — — — 2.
5 Unit V nA mA V mS pF pF dB dB Test conditions I G = –100 µA, IS = 0 VGS = –0.
5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Crss PG NF VDS = 5 V, VGS = 0, f = 100 MHz 1.
The 2SK522 is grouped by I DSS as follows.
2 2SK522 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Drain Current ID (mA) Typical Output Characteristics (1) 10 VGS = 0 8 –0.
2 V 6 –0.
4 4 –0.
6 2 –0.
8 –1.
0 Pc h = 20 200 0 m W 100 0 50 100 150 Ambient Temperature Ta (°C) 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Current ID (mA) 8 –0.
2 V 6 –0.
4 4 –0.
6 2 –0.
8 –1.
0 15 Typical Transfer Characteristics VDS = 5 V 10 F E 5 D 0 –3.
0 0 1 2 3 4 Drain to Source Voltage VDS (V) 5 –2.
0 –1.
0 Gate to Source Voltage VGS (V) 0 3 2SK522 Forward Transfer Admittance vs.
Drain to Source Voltage Forward Transfer Admittance yfs (mS) Ta = –25°C 25°C 10 75°C Forward Transfer Admittance yfs (mS) 15 50 20 10 5 2 1.
0 0.
5 0.
2 Forward Transfer Admittance vs.
Drain Current 5 VGS = 0 f = 1 kHz VDS = 5 V f = 1 kHz 0 5 10 Dr...


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