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2SK508

NEC
Part Number 2SK508
Manufacturer NEC
Description N-Channel MOSFET
Published Oct 1, 2010
Detailed Description DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK508 HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JU...
Datasheet PDF File 2SK508 PDF File

2SK508
2SK508

Overview
DATA SHEET www.
DataSheet4U.
com JUNCTION FIELD EFFECT TRANSISTOR 2SK508 HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK508 is low input capacitance and High forward transfer PACKAGE DRAWING (Unit: mm) 2.
8 ±0.
2 0.
4 –0.
05 +0.
1 admittance, it is suitable for AM tuner, wireless installation and cordless telephone.
1.
5 0.
65 +0.
1 –0.
15 0.
95 Ciss = 4.
8 pF TYP.
(VDS = 5.
0 V, ID = 10 mA, f = 1.
0 MHz) • High forward transfer admittance | yfs |2 = 26 mS TYP.
(VDS = 5.
0 V, VGS = 0 V, f = 1.
0 kHz) ORDERING INFORMATION PART NUMBER 2SK508 PACKAGE SC-59 (Mini Mold) 1 0.
3 Marking 1.
1 to 1.
4 0.
16 –0.
06 +0.
1 0.
4 +0.
1 –0.
05 • Low input capacitance 2.
9 ±0.
2 FEATURES 0.
95 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Gate to Drain Voltage Gate to Source Voltage Drain to Source Voltage (VGS = −4.
0 V) Drain Current (DC) Gate Current (DC) Total Power Dissipation Junction Temperature Storage Temperature VGDO VGSO VDSX ID IG PT Tj Tstg −15 −15 15 50 5 200 150 −55 to +150 V V V mA mA mW °C °C The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D18962EJ2V0DS00 (2nd edition) (Previous No.
TC-1651) Date Published December 2007 NS Printed in Japan 0 to 0.
1 1.
Drain 2.
Source 3.
Gate 1985, 2007 The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
www.
DataSheet4U.
com 2SK508 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Gate Cut-off Current Zero Gate Voltage Drain Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IGSS IDSS VGS(off) | yfs |1 | yfs |2 TEST CONDITIONS VGS = −10 V, VDS = 0 V VDS = 5.
...


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