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FJN3303

Fairchild Semiconductor
Part Number FJN3303
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Mar 30, 2005
Detailed Description FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transi...
Datasheet PDF File FJN3303 PDF File

FJN3303
FJN3303

Overview
FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1.
Emitter 2.
Collector 3.
Base Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) * Base Current (DC) Base Current (Pulse) * TC = 25°C unless otherwise noted Parameter Value 700 400 9 1.
5 3 0.
75 1.
5 1.
1 150 -65 ~ 150 Units V V V A A A A W °C °C Collector Power Dissipation (TC = 25°C) Junction Temperature Storage Temperature * Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% ©2005 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FJN3303 Rev.
D FJN3303 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) TC = 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Conditions IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.
5A VCE = 2V, IC = 1.
0A IC = 0.
5A, IB = 0.
1A IC = 1.
0A, IB = 0.
25A IC = 1.
5A, IB = 0.
5A IC = 0.
5A, IB = 0.
1A IC = 1.
0A, IB = 0.
25A VCE = 10V, IC = 0.
1A VCC = 125V, IC = 1A IB1 = - IB2 = -0.
2A RL = 125Ω Min.
700 400 9 Typ.
Max Units V V V 10 10 14 5 23 0.
5 1.
0 3.
0 1.
0 1.
2 4 1.
1 4.
0 0.
7 µA µA V V V V V MHz µs µs µs VBE(sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Thermal Characteristics Symbol RθJC RθJA TC = 25°C unless otherwise noted Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Rating 48 125 Units °C/W °C/W FJN3303 Rev.
D 2 ...


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