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FJN3309R

Fairchild Semiconductor
Part Number FJN3309R
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Mar 30, 2005
Detailed Description FJN3309R FJN3309R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driv...
Datasheet PDF File FJN3309R PDF File

FJN3309R
FJN3309R

Overview
FJN3309R FJN3309R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.
7KΩ) • Complement to FJN4309R 1 TO-92 1.
Emitter 2.
Collector 3.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 40 5 100 300 150 -55 ~ 150 Units V V V mA mW °C °C E B R Equivalent Circuit C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 ...


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