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FDD3670

Fairchild Semiconductor
Part Number FDD3670
Manufacturer Fairchild Semiconductor
Description 100V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD3670 January 2000 ADVANCE INFORMATION FDD3670 100V N-Channel PowerTrench MOSFET General Description This N-Channel...
Datasheet PDF File FDD3670 PDF File

FDD3670
FDD3670

Overview
FDD3670 January 2000 ADVANCE INFORMATION FDD3670 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 34 A, 100 V.
RDS(ON) = 0.
030 Ω @ VGS = 10 V RDS(ON) = 0.
033 Ω @ VGS = 6 V • Low gate charge (57 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ±20 (Note 1) Units V V A W 34 100 70 3.
2 1.
3 -55 to +150 Maximum Power Dissipation @ TC = 25°C @ TA = 25°C @ TA = 25°C (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 1.
8 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD3670 Device FDD3670 Reel Size 13’’ Tape width 16mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDD3670 Rev A(W) FDD3670 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 20 V, VGS = –20 V VGS = 0 V VDS = 0 ...


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