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FDD603AL

Fairchild Semiconductor
Part Number FDD603AL
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDD603AL July 1999 FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N...
Datasheet PDF File FDD603AL PDF File

FDD603AL
FDD603AL

Overview
FDD603AL July 1999 FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize onstate resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features • 33 A, 30 V.
RDS(ON) = 0.
023 Ω @ VGS = 10 V RDS(ON) = 0.
037 Ω @ VGS = 4.
5 V.
• • • Critical DC electrical parameters specified at elevated temperature.
Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode.
High density cell design for extremely low RDS(ON) .
Applications • • DC/DC converters Motor drives D D G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Sour...


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