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FDJ1027P

Fairchild Semiconductor
Part Number FDJ1027P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDJ1027P November 2004 FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET General Description This dual P-Channel 1...
Datasheet PDF File FDJ1027P PDF File

FDJ1027P
FDJ1027P


Overview
FDJ1027P November 2004 FDJ1027P P-Channel 1.
8V Specified PowerTrench® MOSFET General Description This dual P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
Features • –2.
8 A, –20 V RDS(ON) = 160 mΩ @ VGS = –4.
5 V RDS(ON) = 230 mΩ @ VGS = –2.
5 V RDS(ON) = 390 mΩ @ VGS = –1.
8 V • Low gate charge, High Power and Current handling Applications • Battery management/Charger Application • Load switch capability • High performance trench technology for extremely low RDS(ON) • FLMP SC75 package: Enhanced thermal performance in i...



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