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FDJ1028N

Fairchild Semiconductor
Part Number FDJ1028N
Manufacturer Fairchild Semiconductor
Description N-Channel 2.5 Vgs Specified PowerTrench MOSFET
Published Jun 4, 2007
Detailed Description FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET August 2006 FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® M...
Datasheet PDF File FDJ1028N PDF File

FDJ1028N
FDJ1028N

Overview
FDJ1028N N-Channel 2.
5 Vgs Specified PowerTrench® MOSFET August 2006 FDJ1028N N-Channel 2.
5 Vgs Specified PowerTrench® MOSFET Features ■ 3.
2 A, 20 V.
RDS(ON) = 90 mΩ @ VGS = 4.
5 V RDS(ON) = 130 mΩ @ VGS = 2.
5 V ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications ■ Battery management General Description This dual N-Channel 2.
5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
S2 S1 G1 5 4 Bottom Drain Contact 3 2 1 Bottom Drain Contact S1 www.
DataSheet4U.
com S2 G2 6 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for single Operation (Note 1a) (Note 1a) Pa...


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