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FDP5645

Fairchild Semiconductor
Part Number FDP5645
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFE...
Datasheet PDF File FDP5645 PDF File

FDP5645
FDP5645

Overview
FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 80 A, 60 V.
RDS(ON) = 0.
0095 Ω @ VGS = 10 V RDS(ON) = 0.
011 Ω @ VGS = 6 V.
• Critical DC electrical parameters specified at elevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating.
D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Max...


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