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FDP5690

Fairchild Semiconductor
Part Number FDP5690
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET...
Datasheet PDF File FDP5690 PDF File

FDP5690
FDP5690

Overview
FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features • 32 A, 60 V.
RDS(ON) = 0.
027 Ω @ VGS = 10 V RDS(ON) = 0.
032 Ω @ VGS = 6 V.
• Critical DC electrical parameters specified at evevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating.
D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP5690 60 ±20 FDB5690 Units V V A W W/°C °C - Continuous - Pulsed 32 100 58 0.
4 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.
6 62.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB5690 FDP5690 2000 Fairchild Semiconductor International Device FDB5690 FDP5690 Reel Size 13’’ Tube Tape Width 24mm N/A Quantity 800 45 FDP5690/FDB5690 Rev.
C FDP5690/FDB5690 Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings WDSS IAR Tc = 25°C unless otherwise noted Test Conditions (Note1) Min Typ Max 80 32 Units mJ A Single Pulse Drain-Source VDD = 30 V, ID = 32A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR Drain-Source Breakd...


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