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FDR856P

Fairchild Semiconductor
Part Number FDR856P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Ch...
Datasheet PDF File FDR856P PDF File

FDR856P
FDR856P

Overview
March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.
Features - 6.
3 A, -30 V, RDS(ON) =0.
025 Ω @ VGS = -10 V RDS(ON) =0.
040 Ω @ VGS = -4.
5 V.
SuperSOTTM-8 pac...


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