DatasheetsPDF.com

FDS4470

Fairchild Semiconductor
Part Number FDS4470
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS4470 December 2006 FDS4470 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been de...
Datasheet PDF File FDS4470 PDF File

FDS4470
FDS4470

Overview
FDS4470 December 2006 FDS4470 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Applications • DC/DC converter Features • 12.
5 A, 40 V.
RDS(ON) = 9 mΩ @ VGS = 10 V • Low gate charge (45 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS4470 FDS4470 13’’ Ratings 40 +30/–20 12.
5 50 2.
5 1.
4 1.
2 –55 to +175 50 125 25 Tape width 12mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS4470 Rev D1 (W) FDS4470 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=12.
5A IAS Drain-Source Avalanche Current 370 mJ 12.
5 A Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage, Forward IGSSR Gate–Body Leakage, Reverse VGS = 0 V, ID = 250 μA 40 ID = 250 μA, Referenced to 25°C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)