• 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V
• Low gate charge (9.5 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
Applications
• DC/DC converte...
FDS4488 PDF File
