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FDS8936S

Fairchild Semiconductor
Part Number FDS8936S
Manufacturer Fairchild Semiconductor
Description Dual N-Channel MOSFET
Published Mar 30, 2005
Detailed Description August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 N-Channel enhance...
Datasheet PDF File FDS8936S PDF File

FDS8936S
FDS8936S

Overview
August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.
These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features Low gate charge.
5.
0 A, 30 V.
RDS(ON) = 0.
040 Ω @ VGS = 10 V.
High density cell design for extremely low R DS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source ...


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