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FDS8935

Fairchild Semiconductor
Part Number FDS8935
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2...
Datasheet PDF File FDS8935 PDF File

FDS8935
FDS8935

Overview
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.
1 A, 183 mΩ November 2010 Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.
1 A „ Max rDS(on) = 247 mΩ at VGS = -4.
5 V, ID = -1.
9 A „ High performance trench technology for extremely low rDS(on) „ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
„ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant Applications „ Load Switch „ Synchronous Rectifier D2 D1 D1 D2 Pin 1 G2 S2 G1 ...


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