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EMZ1DXV6T1

Part Number	EMZ1DXV6T1
Manufacturer	ON Semiconductor
Description	Dual General Purpose Transistors
Published	Mar 30, 2005
Detailed Description	EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors NPN/PNP Dual (Complimentary) This transistor is ...
Datasheet	EMZ1DXV6T1 PDF File

Overview

EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors NPN/PNP Dual (Complimentary) This transistor is designed for general purpose amplifier applications.
It is housed in the SOT−563 which is designed for low power surface mount applications.
(3) http://onsemi.
com (2) (1) • Lead−Free Solder Plating • Low VCE(SAT), t0.
5 V MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.
0 −100 Unit V V V mAdc Q1 Q2 (4) (5) (6) 6 54 3 12 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1.
FR−4 @ Minimum Pad.
RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.
9 (Note 1) 350 (Note 1) Max 500...

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