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EMZ1DXV6T5

ON Semiconductor
Part Number EMZ1DXV6T5
Manufacturer ON Semiconductor
Description Dual General Purpose Transistors
Published Mar 30, 2005
Detailed Description EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors NPN/PNP Dual (Complimentary) This transistor is ...
Datasheet PDF File EMZ1DXV6T5 PDF File

EMZ1DXV6T5
EMZ1DXV6T5

Overview
EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors NPN/PNP Dual (Complimentary) This transistor is designed for general purpose amplifier applications.
It is housed in the SOT−563 which is designed for low power surface mount applications.
(3) http://onsemi.
com (2) (1) • Lead−Free Solder Plating • Low VCE(SAT), t0.
5 V MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.
0 −100 Unit V V V mAdc Q1 Q2 (4) (5) (6) 6 54 3 12 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1.
FR−4 @ Minimum Pad.
RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.
9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.
0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C SOT−563 CASE 463A PLASTIC MARKING DIAGRAM 3Z D °C/W 3Z = Specific Device Code D = Date Code Unit mW mW/°C °C/W °C EMZ1DXV6T5 SOT−563 Symbol PD ORDERING INFORMATION Device EMZ1DXV6T1 Package SOT−563 Shipping† 4 mm Pitch 4000/Tape & Reel 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
This document contains information on a product under development.
ON Semiconductor reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2003 1 October, 2003 − Rev.
P0 Publication Order Number: EMZ1DXV6/D EMZ1DXV6T1, EMZ1DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Q1: PNP Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) Collector−Emitter Breakdown Voltage (IC = −1.
0 mAdc, IB = 0) Emitter−Base Brea...


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