DatasheetsPDF.com

FQB3N80

Fairchild Semiconductor
Part Number FQB3N80
Manufacturer Fairchild Semiconductor
Description 800V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB3N80 / FQI3N80 September 2000 QFET FQB3N80 / FQI3N80 800V N-Channel MOSFET General Description These N-Channel enha...
Datasheet PDF File FQB3N80 PDF File

FQB3N80
FQB3N80

Overview
FQB3N80 / FQI3N80 September 2000 QFET FQB3N80 / FQI3N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 3.
0A, 800V, RDS(on) = 5.
0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)