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FQB3N90

Part Number	FQB3N90
Manufacturer	Fairchild Semiconductor
Description	900V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQB3N90 / FQI3N90 September 2000 QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description These N-Channel enha...
Datasheet	FQB3N90 PDF File

Overview

FQB3N90 / FQI3N90 September 2000 QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 3.
6A, 900V, RDS(on) = 4.
25 Ω @ VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 8.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capabi...

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