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FQB4N90

Fairchild Semiconductor
Part Number FQB4N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB4N90 / FQI4N90 October 2001 QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet PDF File FQB4N90 PDF File

FQB4N90
FQB4N90

Overview
FQB4N90 / FQI4N90 October 2001 QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
TM Features • • • • • • 4.
2A, 900V, RDS(on) = 3.
3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current...


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