DatasheetsPDF.com

FQD13N06L

Fairchild Semiconductor
Part Number FQD13N06L
Manufacturer Fairchild Semiconductor
Description N-Channel QFET MOSFET
Published Apr 1, 2005
Detailed Description FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description These N-Chann...
Datasheet PDF File FQD13N06L PDF File

FQD13N06L
FQD13N06L

Overview
FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
TM Features • • • • • • • 11A, 60V, RDS(on) = 0.
115Ω @VGS = 10 V Low gate charge ( typical 4.
8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)