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FQD13N06TM

Fairchild Semiconductor
Part Number FQD13N06TM
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Aug 3, 2015
Detailed Description FQD13N06 — N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 Description This N...
Datasheet PDF File FQD13N06TM PDF File

FQD13N06TM
FQD13N06TM

Overview
FQD13N06 — N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 10 A, 60 V, RDS(on) = 140 mΩ (Max.
) @ VGS = 10 V, ID = 5.
0 A • Low Gate Charge (Typ.
5.
8 nC) • Low Crss (Typ.
15 pF) • 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single P...


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