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FQD6N25

Fairchild Semiconductor
Part Number FQD6N25
Manufacturer Fairchild Semiconductor
Description 250V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD6N25 — N-Channel QFET® MOSFET FQD6N25 N-Channel QFET® MOSFET 250 V, 4.4 A, 1.0 Ω November 2013 Description This N-...
Datasheet PDF File FQD6N25 PDF File

FQD6N25
FQD6N25

Overview
FQD6N25 — N-Channel QFET® MOSFET FQD6N25 N-Channel QFET® MOSFET 250 V, 4.
4 A, 1.
0 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 4.
4 A, 250 V, RDS(on) = 1.
0 Ω (Max.
) @ VGS = 10 V, ID = 2.
2 A • Low Gate Charge (Typ.
6.
6 nC) • Low Crss (Typ.
7.
5 pF) • 100% Avalanche Tested • RoHS Compliant D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
 + 6 6 + ;  6 ; !$ 8         +             1-()73   1-.
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