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FQI13N10L

Fairchild Semiconductor
Part Number FQI13N10L
Manufacturer Fairchild Semiconductor
Description 100V LOGIC N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB13N10L / FQI13N10L December 2000 QFET FQB13N10L / FQI13N10L 100V LOGIC N-Channel MOSFET General Description These N...
Datasheet PDF File FQI13N10L PDF File

FQI13N10L
FQI13N10L

Overview
FQB13N10L / FQI13N10L December 2000 QFET FQB13N10L / FQI13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
D TM Features • • • • • • • 12.
8A, 100V, RDS(on) = 0.
18Ω @VGS = 10 V Low gate charge ( typical 8.
7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Par...


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