DatasheetsPDF.com

FQI13N10

Fairchild Semiconductor
Part Number FQI13N10
Manufacturer Fairchild Semiconductor
Description 100V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel en...
Datasheet PDF File FQI13N10 PDF File

FQI13N10
FQI13N10

Overview
FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
D TM Features • • • • • • • 12.
8A, 100V, RDS(on) = 0.
18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB13N10 / FQI13N10 100 12.
8 9.
05 51.
2 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 95 12.
8 6.
5 6.
0 3.
75 65 0.
43 -55 to +175 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.
31 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A1, January 2001...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)