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FQI5P10

Fairchild Semiconductor
Part Number FQI5P10
Manufacturer Fairchild Semiconductor
Description 100V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB5P10 / FQI5P10 QFET FQB5P10 / FQI5P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode pow...
Datasheet PDF File FQI5P10 PDF File

FQI5P10
FQI5P10

Overview
FQB5P10 / FQI5P10 QFET FQB5P10 / FQI5P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM Features • • • • • • • -4.
5A, -100V, RDS(on) = 1.
05Ω @VGS = -10 V Low gate charge ( typical 6.
3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Vo...


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