DatasheetsPDF.com

FQI5P20

Fairchild Semiconductor
Part Number FQI5P20
Manufacturer Fairchild Semiconductor
Description 200V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB5P20 / FQI5P20 May 2000 QFET FQB5P20 / FQI5P20 200V P-Channel MOSFET General Description These P-Channel enhancemen...
Datasheet PDF File FQI5P20 PDF File

FQI5P20
FQI5P20

Overview
FQB5P20 / FQI5P20 May 2000 QFET FQB5P20 / FQI5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters.
TM Features • • • • • -4.
8A, -200V, RDS(on) = 1.
4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested D G! G S ! ● ● ▶ ▲ ● S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB5P20 / FQI5P2...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)