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FQP3N30

Fairchild Semiconductor
Part Number FQP3N30
Manufacturer Fairchild Semiconductor
Description 300V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP3N30 — N-Channel QFET® MOSFET FQP3N30 N-Channel QFET® MOSFET 300 V, 3.2 A, 2.2 Ω Description This N-Channel enhancem...
Datasheet PDF File FQP3N30 PDF File

FQP3N30
FQP3N30


Overview
FQP3N30 — N-Channel QFET® MOSFET FQP3N30 N-Channel QFET® MOSFET 300 V, 3.
2 A, 2.
2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
November 2013 Features • 3.
2 A, 300 V, RDS(on) = 2.
2 Ω (Max.
) @ VGS = 10 V, ID = 1.
6 A • Low Gate Charge (Typ.
5.
5 nC) • Low Crss (Typ.
6 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S FQP3N30 300 3.
2 2.
02 12.
8 ± 30 140 3.
2 5.
5 4.
5 55 0.
44 -55 to +150 300 FQP3N30 2.
27 62.
5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2000 Fairchild Semiconductor Corporation 1 FQP3N30 Rev.
C1 www.
fairchildsemi.
com FQP3N30 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQP3N30 Top Mark FQP3N30 Package Packing Method TO-220 Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted.
Test Conditions Min Typ Max Unit Of...



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