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FQP4N90

Part Number	FQP4N90
Manufacturer	Fairchild Semiconductor
Description	900V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQP4N90 October 2001 QFET FQP4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power fie...
Datasheet	FQP4N90 PDF File

Overview

FQP4N90 October 2001 QFET FQP4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
TM Features • • • • • • 4.
2A, 900V, RDS(on) = 3.
3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G...

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