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FQP4N90


Part Number FQP4N90
Manufacturer Fairchild Semiconductor
Title 900V N-Channel MOSFET
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a...
Features





• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-220 IRF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD...

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FQP4N90C : This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 5.6 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS.




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