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2SC4881

Part Number	2SC4881
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications 2SC4881 Unit: mm • Low satur...
Datasheet	2SC4881 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications 2SC4881 Unit: mm • Low saturation voltage: VCE (sat) = 0.
4 V (max) • High-speed switching: tstg = 0.
8 μs (typ.
) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current DC IC 5 A Pulse ICP 8 Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 20 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Note: Using continuously under heavy loads (e.
g.
the application of...

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