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2SC5110

Toshiba Semiconductor
Part Number 2SC5110
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum R...
Datasheet PDF File 2SC5110 PDF File

2SC5110
2SC5110

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 30 60 100 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
JEDEC ― operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the JEITA TOSHIBA SC-70 2-2E1A Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual Weight: 6 mg (typ.
) reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2010-04-14 2SC5110 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO IEBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA fT ⎪S21e⎪2 VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz Cob Cre Cc･rbb’ VCB = 5 V, IE = 0, f = 1 MHz (Note 2) VCB = 5 V, IC = 3 mA, f = 30 MHz ⎯ ⎯ 80 3 6 ⎯ ⎯ ⎯ ⎯ 1 μA ⎯ 1 μA ⎯ 240 ⎯ 5 ⎯ GHz 10 ⎯ dB 0.
9 ⎯ pF 0.
7 1.
1 pF 6 15 ps Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking 2 2010-04-14 2SC5110 3 2010-04-14 2SC5110 S-Parameter ZO = 50 Ω, Ta = 25°C VCE = 5 V, IC = 5 mA Frequency (MHz) 200 400 6...


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