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2SC5122

Toshiba Semiconductor
Part Number 2SC5122
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • Hig...
Datasheet PDF File 2SC5122 PDF File

2SC5122
2SC5122

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 20 mA, IB = 0.
5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current DC Pulse IC 50 mA ICP 100 Base current IB 25 mA Collector power dissipation PC 900 mW JEDEC TO-92MOD Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-5J1A Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 0.
36 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 http://store.
iiic.
cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE Cob VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.
5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz Marking 2SC5122 Min Typ.
Max Unit ― ― 1 μA ― ― 1 μA 400 ― ― V 80 ― ― 100 ― 300 ― 0.
4 1.
0 V ― 0.
7 1.
0 V ― 4 ― pF C5122 Part No.
(or abbreviation code) Lot No.
Note2 ...


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