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2SC5195

NEC
Part Number 2SC5195
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low V...
Datasheet PDF File 2SC5195 PDF File

2SC5195
2SC5195

Overview
DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.
5 dB TYP.
@VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.
5 dB TYP.
@VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current PACKAGE DRAWINGS (Unit: mm) 1.
6±0.
1 0.
8±0.
1 2 0.
5 0.
5 1.
6±0.
1 1.
0 0.
2 –0 +0.
1 IC = 100 mA • Supercompact Mini Mold Package 3 ORDERING INFORMATION PART NUMBER 2SC5195 QUANTITY In-bulk products (50 pcs.
) Taped products (3 Kpcs/Reel) PACKING STYLE Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of the tape.
1 0.
75±0.
05 0.
6 2SC5195-T1 Remark If you require an evaluation sample, please contact an NEC Sales Representative.
(Unit sample quantity is 50 pcs.
) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage...


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